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Samsung M471A1K43EB1-CWE memory module 8 GB 1 x 8 GB DDR4 3200 MHz
Overview
8 GB, DDR4, 260-pin, SODIMM, 3200 MHz
Small outline DIMM Smaller than normal DIMMs Supports x8 / x16 / up to 2 ranks per DIMM and 2DPC configuration For systems with limited space issues Application : Laptop
More Information
SKU
M471A1K43EB1-CWE
EAN
5715063113233
Specification
Power Memory voltage 1.2 V Memory Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for Notebook Memory form factor 260-pin SO-DIMM CAS latency 21 Memory voltage 1.2 V Module configuration 1024M x 8 ECC No Memory clock speed 3200 MHz Internal memory type DDR4 Features Buffered memory type Unregistered (unbuffered) Memory layout (modules x size) 1 x 8 GB Internal memory 8 GB Component for Notebook Memory form factor 260-pin SO-DIMM CAS latency 21 Memory voltage 1.2 V Module configuration 1024M x 8 ECC No Memory clock speed 3200 MHz Internal memory type DDR4
Manufacturer
Samsung
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