Samsung MZ-V9P1T0 M.2 1 TB PCI Express 4.0 V-NAND MLC NVMe

SKU
MZ-V9P1T0GW
In stock
AED452.66 AED431.10
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Overview
Samsung MZ-V9P1T0, 1 TB, M.2, 7450 MB/s
Samsung MZ-V9P1T0. SSD capacity: 1 TB, SSD form factor: M.2, Read speed: 7450 MB/s, Write speed: 6900 MB/s, Component for: PC
More Information
SKU MZ-V9P1T0GW
EAN 8806094594645
Specification
Hard drive
SSD capacity1 TB
Memory typeV-NAND MLC
Data transmission
Read speed7450 MB/s
Write speed6900 MB/s
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Security
Security algorithms256-bit AES
Endurance
Mean time between failures (MTBF)1500000 h
Performance
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
SSD capacity1 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
Design
Component forPC
SSD form factorM.2
Features
InterfacePCI Express 4.0
Component forPC
NVMeYes
NVMe version2.0
DevSlp (device sleep) supportYes
SSD capacity1 TB
Security algorithms256-bit AES
S.M.A.R.T. supportYes
Read speed7450 MB/s
TRIM supportYes
Write speed6900 MB/s
Memory typeV-NAND MLC
Random write (4KB)1550000 IOPS
Random read (4KB)1200000 IOPS
Mean time between failures (MTBF)1500000 h
Hardware encryptionYes
SSD form factorM.2
M.2 SSD size2280 (22 x 80 mm)
Power
Power consumption (average)5.4 W
Power consumption (max)7.8 W
Operating voltage3.3 V
Operational conditions
Operating temperature (T-T)0 - 70 °C
Operating shock1500 G
Technical details
InterfacePCI Express 4.0
S.M.A.R.T. supportYes
Operating temperature (T-T)0 - 70 °C
TRIM supportYes
Operating shock1500 G
Hardware encryptionYes
SSD form factorM.2
Weight & dimensions
Width80 mm
Weight28 g
Height24.3 mm
Depth8.2 mm
Manufacturer Samsung
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